| No. |
Part Name |
Description |
Manufacturer |
| 4291 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4292 |
AM81719-030 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 4293 |
AM81719-030 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 4294 |
AM81719-040 |
RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS |
SGS Thomson Microelectronics |
| 4295 |
AM81719-040 |
RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS |
ST Microelectronics |
| 4296 |
AM81720-012 |
COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 4297 |
AM81720-012 |
COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 4298 |
AM81720-020 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 4299 |
AM81922-018 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 4300 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 4301 |
AM82023-010 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 4302 |
AM82023-016 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 4303 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4304 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 4305 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
| 4306 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4307 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4308 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4309 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 4310 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 4311 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 4312 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4313 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4314 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4315 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4316 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4317 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4318 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 4319 |
AM82731-003 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 4320 |
AM82731-003 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
ST Microelectronics |
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