| No. |
Part Name |
Description |
Manufacturer |
| 4321 |
TA8172 |
12.5V UHF Mobile Silicon NPN Overlay Transistor |
RCA Solid State |
| 4322 |
TA8493 |
12.5V UHF Mobile Silicon NPN Overlay Transistor |
RCA Solid State |
| 4323 |
TDA18250AHN |
Cable silicon tuner |
NXP Semiconductors |
| 4324 |
TDA18250BHN |
Cable silicon tuner |
NXP Semiconductors |
| 4325 |
TDA18250HN |
Cable Silicon Tuner |
NXP Semiconductors |
| 4326 |
TDA18260HN |
Dual cable silicon tuner |
NXP Semiconductors |
| 4327 |
TFR1N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (fast recovery) |
TOSHIBA |
| 4328 |
TFR1T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (fast recovery) |
TOSHIBA |
| 4329 |
TFR2N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4330 |
TFR2T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4331 |
TFR3N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4332 |
TFR3T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4333 |
TFR4N |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4334 |
TFR4T |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4335 |
TFR7H |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery) |
TOSHIBA |
| 4336 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4337 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4338 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4339 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4340 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4341 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4342 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4343 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4344 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 4345 |
TN1215R |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.6@24AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage |
SemiWell Semiconductor |
| 4346 |
TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 4347 |
TPS703 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4348 |
TPS704 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4349 |
TPS705 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
| 4350 |
TPS706 |
PHOTO DIODE SILICON PIN |
TOSHIBA |
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