| No. |
Part Name |
Description |
Manufacturer |
| 4321 |
AGP15-400 |
400 V, 1.5 A, miniature glass passivated junction plastic controlled avalanche rectifier |
General Instruments |
| 4322 |
AGP15-600 |
600 V, 1.5 A, miniature glass passivated junction plastic controlled avalanche rectifier |
General Instruments |
| 4323 |
AGP15-800 |
800 V, 1.5 A, miniature glass passivated junction plastic controlled avalanche rectifier |
General Instruments |
| 4324 |
ALZ10 |
Germanium PNP junction RF power transistor |
TELEFUNKEN |
| 4325 |
AN-6229 |
Microwave Power-Transistor Reliability as a Function of Current Denisity and Junction Temperature - Application Note |
RCA Solid State |
| 4326 |
APPLICATION-NOTE |
hFE and noise figure deterioration caused by E-B junction breakdown in transistors |
NEC |
| 4327 |
ASY24 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 4328 |
ASY24B |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 4329 |
ASY26 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 4330 |
ASY27 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 4331 |
ASY30 |
Germanium PNP junction switching transistor |
TELEFUNKEN |
| 4332 |
AUIR0815S |
Buffer gate driver family, in conjunction with a predriver stage, is suited to drive a single half bridge in power switching applications. |
International Rectifier |
| 4333 |
AUIR0815STR |
Buffer gate driver family, in conjunction with a predriver stage, is suited to drive a single half bridge in power switching applications. |
International Rectifier |
| 4334 |
AUY28 |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
| 4335 |
AUZ11 |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
| 4336 |
AUZ11D |
Germanium PNP junction power switching transistor |
TELEFUNKEN |
| 4337 |
BA100 |
Silicon junction diode |
COMPELEC |
| 4338 |
BA114 |
Silicon Alloyed Junction Diode |
Philips |
| 4339 |
BA157GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0 A |
Vishay |
| 4340 |
BA158GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0 A |
Vishay |
| 4341 |
BA159GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0 A |
Vishay |
| 4342 |
BAY17 |
Diffused junction silicon diode |
ITT Industries |
| 4343 |
BAY18 |
Diffused junction silicon diode |
ITT Industries |
| 4344 |
BAY19 |
Diffused junction silicon diode |
ITT Industries |
| 4345 |
BAY20 |
Diffused junction silicon diode |
ITT Industries |
| 4346 |
BAY21 |
Diffused junction silicon diode |
ITT Industries |
| 4347 |
BBY24 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 4348 |
BBY24 |
Junction varactor |
Siemens |
| 4349 |
BBY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 4350 |
BBY24-BBY27 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
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