| No. |
Part Name |
Description |
Manufacturer |
| 4321 |
1N827A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 4322 |
1N829 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 4323 |
1N853 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4324 |
1N854 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4325 |
1N855 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4326 |
1N856 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4327 |
1N857 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4328 |
1N909 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 4329 |
1N910 |
40 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 4330 |
1N911 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 4331 |
1N914 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 4332 |
1N914 |
SILICON EPITAXIAL PLANAR DIODES |
GOOD-ARK Electronics |
| 4333 |
1N914 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 4334 |
1N914 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4335 |
1N914A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 4336 |
1N914A |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4337 |
1N914B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 4338 |
1N914B |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4339 |
1N914THRU1N4454 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 4340 |
1N916 |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4341 |
1N916A |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 4342 |
1N916A |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4343 |
1N916B |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
| 4344 |
1N916B |
Silicon Diode Case Style DO-7 |
Transitron Electronic |
| 4345 |
1N933 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 4346 |
1N935 |
Silicon Voltage Reference Diode temperature compensated 9.0V |
Transitron Electronic |
| 4347 |
1N935A |
Silicon Voltage Reference Diode temperature compensated 9.0V |
Transitron Electronic |
| 4348 |
1N935B |
Silicon Voltage Reference Diode temperature compensated 9.0V, Military Version USN/JAN |
Transitron Electronic |
| 4349 |
1N936 |
Silicon Voltage Reference Diode temperature compensated 9.0V |
Transitron Electronic |
| 4350 |
1N936A |
Silicon Voltage Reference Diode temperature compensated 9.0V |
Transitron Electronic |
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