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Datasheets for MIT

Datasheets found :: 63922
Page: | 141 | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 |
No. Part Name Description Manufacturer
4321 BC328-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4322 BC328-40 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 250 - 630 hFE Continental Device India Limited
4323 BC328-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4324 BC328A 0.625W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 0.800A Ic, 100 - 400 hFE Continental Device India Limited
4325 BC337 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 630 hFE Continental Device India Limited
4326 BC337 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4327 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
4328 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
4329 BC337-16 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 250 hFE Continental Device India Limited
4330 BC337-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4331 BC337-25 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 160 - 400 hFE Continental Device India Limited
4332 BC337-25 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4333 BC337-40 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 250 - 600 hFE Continental Device India Limited
4334 BC337-40 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4335 BC337A 0.625W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.800A Ic, 100 - 400 hFE Continental Device India Limited
4336 BC338 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 100 - 600 hFE Continental Device India Limited
4337 BC338 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4338 BC338-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4339 BC338-25 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 160 - 400 hFE Continental Device India Limited
4340 BC338-25 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4341 BC338-40 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 250 - 600 hFE Continental Device India Limited
4342 BC338-40 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4343 BC368 0.800W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE Continental Device India Limited
4344 BC368-10 0.800W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 63 - 160 hFE Continental Device India Limited
4345 BC368-25 0.800W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 160 - 400 hFE Continental Device India Limited
4346 BC368BPL 0.900W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE Continental Device India Limited
4347 BC369 0.800W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE Continental Device India Limited
4348 BC369 PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) Siemens
4349 BC369-10 0.800W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 63 - 160 hFE Continental Device India Limited
4350 BC369-16 0.800W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 100 - 250 hFE Continental Device India Limited


Datasheets found :: 63922
Page: | 141 | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 |



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