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Datasheets for FOR

Datasheets found :: 87376
Page: | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 |
No. Part Name Description Manufacturer
4351 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
4352 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
4353 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
4354 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
4355 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
4356 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
4357 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
4358 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
4359 81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
4360 81600M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
4361 81720-20 Transistor for communications applications SGS Thomson Microelectronics
4362 817XX Fixed Inductors for Surface Mounting TOKO
4363 81922-18 Transistor for communications applications SGS Thomson Microelectronics
4364 81RIA100 V(rrm/drm): 1000V; 110A RMS SCR. For general puspose phase control applications International Rectifier
4365 82 Marking for NE68019 part number, 19 NEC package NEC
4366 82007 IR Receiver Modules for Remote Control Systems Vishay
4367 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
4368 82023-10 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
4369 82023-16 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
4370 82092 IR Receiver Modules for Remote Control Systems Vishay
4371 82107 IR Receiver Modules for Remote Control Systems Vishay
4372 82159 IR Receiver Modules for Remote Control Systems Vishay
4373 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4374 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4375 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4376 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4377 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
4378 82325-40 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
4379 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4380 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics


Datasheets found :: 87376
Page: | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 |



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