| No. |
Part Name |
Description |
Manufacturer |
| 4351 |
GBPC2506 |
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 4352 |
GBPC2508 |
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:25A |
Chenyi Electronics |
| 4353 |
GBPC2508 |
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 4354 |
GBPC2510 |
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:25A |
Chenyi Electronics |
| 4355 |
GBPC2510 |
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 4356 |
GEPS2001 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
General Electric Solid State |
| 4357 |
GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION |
TOSHIBA |
| 4358 |
H11B255 |
Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. |
General Electric Solid State |
| 4359 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 4360 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 4361 |
HBD437T |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Hi-Sincerity Microelectronics |
| 4362 |
HBD438T |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Hi-Sincerity Microelectronics |
| 4363 |
HD2A-5D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
| 4364 |
HD3A-4D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
| 4365 |
HD4A-7D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
| 4366 |
HN1A01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4367 |
HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4368 |
HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4369 |
HN1B01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4370 |
HN1B04FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4371 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 4372 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4373 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 4374 |
HT2 |
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
Zetex Semiconductors |
| 4375 |
HT3 |
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
Zetex Semiconductors |
| 4376 |
ITR20002 |
infrared emitting diode and an NPN silicon phototransistor |
Everlight Electronics |
| 4377 |
ITR9909 |
An infrared Emitting Diode and an NPN silicon phototransistor |
Everlight Electronics |
| 4378 |
JAN1N1202RA |
12A silicon power rectifier, 200V |
Microsemi |
| 4379 |
JAN1N1204RA |
12A silicon power rectifier, 400V |
Microsemi |
| 4380 |
JAN1N1206RA |
12A silicon power rectifier, 600V |
Microsemi |
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