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Datasheets for DESI

Datasheets found :: 11458
Page: | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 |
No. Part Name Description Manufacturer
4351 SAB C515-L24N 8-Bit-microcontroller (not for new designs) Infineon
4352 SAB C517A-LN 8-bit microcontroller (not for new designs) Infineon
4353 SAF C509-LM 8-bit microcontroller (not for new designs) Infineon
4354 SAK C509-LM 8-bit microcontroller (not for new designs) Infineon
4355 SD1014-02 NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W SGS Thomson Microelectronics
4356 SD1070 Silicon epitaxial NPN planar high-frequency transistor employs a multi emitter electrode design 28V 13.5W SGS Thomson Microelectronics
4357 SD1143-01 12.5V Class C 10W epitaxial silicon NPN planar transistor designed primarly for VHF communications SGS Thomson Microelectronics
4358 SD1273 RF transistor 13,6V 40W designed for VHF, ideally suited for marine radio applications SGS Thomson Microelectronics
4359 SD1274-1 175MHz 12.5V 30W NPN RF Transistor designed primarily for VHF communications SGS Thomson Microelectronics
4360 SD1400-02 24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems SGS Thomson Microelectronics
4361 SD1400-03 24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range SGS Thomson Microelectronics
4362 SD1420-01 860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications SGS Thomson Microelectronics
4363 SD1426 24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz SGS Thomson Microelectronics
4364 SD1429-03 15W 12.5V Class C NPN RF transistor designed for UHF communications SGS Thomson Microelectronics
4365 SD1451 30MHz 12.5V 60W NPN HF Transistor designed primarily for SSB communications SGS Thomson Microelectronics
4366 SD1495 870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems SGS Thomson Microelectronics
4367 SD1495-03 24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz SGS Thomson Microelectronics
4368 SD1500 NPN Planar Pulsed Transistor designed for use in L BAND radar applications SGS Thomson Microelectronics
4369 SD1501 1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
4370 SD1504 1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band SGS Thomson Microelectronics
4371 SD1505 1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND SGS Thomson Microelectronics
4372 SD1507 1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND SGS Thomson Microelectronics
4373 SD1511-08 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
4374 SD1512 NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
4375 SD1513 NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
4376 SD1514 NPN transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. SGS Thomson Microelectronics
4377 SD1520-3 NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies SGS Thomson Microelectronics
4378 SD1520-8 NPN pulsed power transistor designed for Class A operation at IFF, DME and TACAN frequencies SGS Thomson Microelectronics
4379 SD1522-3 NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN SGS Thomson Microelectronics
4380 SD1522-9 NPN power transistor, designed applications requiring peak power and low duty cycles such as IFF, DME, TACAN SGS Thomson Microelectronics


Datasheets found :: 11458
Page: | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 |



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