| No. |
Part Name |
Description |
Manufacturer |
| 4351 |
2SK2802 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 4352 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4353 |
2SK2881 |
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) |
Isahaya Electronics Corporation |
| 4354 |
2SK2941-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 4355 |
2SK2941-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 4356 |
2SK2941-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 4357 |
2SK2941-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 4358 |
2SK2983-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 4359 |
2SK2983-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 4360 |
2SK2983-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 4361 |
2SK2983-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 4362 |
2SK2984-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 4363 |
2SK2984-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 4364 |
2SK2984-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 4365 |
2SK2984-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 4366 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 4367 |
2SK3000 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 4368 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 4369 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 4370 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4371 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 4372 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 4373 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 4374 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 4375 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 4376 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 4377 |
2SK389 |
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4378 |
2SK406 |
Low Noise Ku-K BAND GaAs FET (This NE71083 datasheet is also the datasheet of 2SK406, see the Electrical Characteristics table) |
NEC |
| 4379 |
2SK407 |
Low noise Ku-K band GaAs MESFET for HI REL applications only (This datasheet of NE67383 is also the datasheet of 2SK407, see the Electrical Characteristics table) |
NEC |
| 4380 |
2SK58 |
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise) |
SONY |
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