No. |
Part Name |
Description |
Manufacturer |
4351 |
NTE6082 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
4352 |
NTE6083 |
Schottky Barrier Rectifier |
NTE Electronics |
4353 |
NTE6084 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
4354 |
NTE6087 |
Schottky Barrier Silicon Rectifier |
NTE Electronics |
4355 |
NTE6091 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
4356 |
NTE6092 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
4357 |
NTE6093 |
Silicon Rectifier Dual, Schottky Barrier |
NTE Electronics |
4358 |
NTE6094 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
4359 |
NTE6248 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
4360 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
4361 |
NTGD4169F |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 |
ON Semiconductor |
4362 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
4363 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4364 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
4365 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
4366 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
4367 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4368 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4369 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
4370 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
4371 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
4372 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
4373 |
NTLUF4189NZ |
Single N-Channel 30 V MOSFET plus Schottky Barrier Diode |
ON Semiconductor |
4374 |
PA886C02 |
Schottky barrier diode |
COLLMER SEMICONDUCTOR INC |
4375 |
PA886C02 |
SCHOTTKY BARRIER DIODE |
Fuji Electric |
4376 |
PBTR2040CT |
Rectifier diodes Schottky barrier |
Philips |
4377 |
PBTR2040CTB |
Rectifier diodes Schottky barrier |
Philips |
4378 |
PBTR2045CT |
Rectifier diodes Schottky barrier |
Philips |
4379 |
PBTR2045CTB |
Rectifier diodes Schottky barrier |
Philips |
4380 |
PBYL1020 |
Rectifier diodes Schottky barrier |
Philips |
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