| No. |
Part Name |
Description |
Manufacturer |
| 4351 |
BA159 |
FAST RECOVERY RECTIFIER |
Shanghai Sunrise Electronics |
| 4352 |
BA159 |
1.0A FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 4353 |
BA159-T3 |
1.0A FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 4354 |
BA159-TB |
1.0A FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 4355 |
BA159D |
800 V, 1 A, fast recovery diode |
Leshan Radio Company |
| 4356 |
BA159GP |
1000 V, 1 A Glass passivated fast recovery rectifier |
Fagor |
| 4357 |
BA159GP |
FAST RECOVERY RECTIFIERS |
Micro Commercial Components |
| 4358 |
BA201 |
Fast recovery diode |
COLLMER SEMICONDUCTOR INC |
| 4359 |
BA201 |
FAST RECOVERY DIODE |
Fuji Electric |
| 4360 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 4361 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 4362 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4363 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4364 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4365 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4366 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4367 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4368 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4369 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4370 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4371 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4372 |
BAT30 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 4373 |
BAT54XY |
Schottky barrier quadruple diode in very small SOT363 package |
NXP Semiconductors |
| 4374 |
BAT54XY |
Schottky barrier quadruple diode in very small SOT363 package |
Philips |
| 4375 |
BAT54XY |
BAT54XY; Schottky barrier quadruple diode in very small SOT363 package |
Philips |
| 4376 |
BAV10 |
High speed diode for core gating applications in very fast memories |
Mullard |
| 4377 |
BAW32A |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 4378 |
BAW32B |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 4379 |
BAW32C |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
| 4380 |
BAW32D |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
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