| No. |
Part Name |
Description |
Manufacturer |
| 4351 |
PMEG4010EJ |
1 A very low VF MEGA Schottky barrier rectifiers |
Philips |
| 4352 |
PMEG4010ET |
1 A very low VF MEGA Schottky barrier rectifiers |
Nexperia |
| 4353 |
PMEG4010ET |
1 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4354 |
PMEG6002EB |
0.2 A very low VF MEGA Schottky barrier rectifier |
Nexperia |
| 4355 |
PMEG6002EB |
0.2 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4356 |
PMEG6002TV |
0.2 A very low VF dual MEGA Schottky barrier rectifier |
Nexperia |
| 4357 |
PMEG6002TV |
0.2 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4358 |
PMEG6010CEH |
1 A very low VF MEGA Schottky barrier rectifier |
Nexperia |
| 4359 |
PMEG6010CEH |
1 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4360 |
PMEG6010CEJ |
1 A very low VF MEGA Schottky barrier rectifiers |
Nexperia |
| 4361 |
PMEG6010CEJ |
1 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4362 |
PMEGXX10BEA |
1 A very low VF MEGA Schottky barrier rectifier |
Philips |
| 4363 |
PMEGXX10BEV |
1 A very low VF MEGA Schottky barrier rectifier |
Philips |
| 4364 |
PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection |
Vishay |
| 4365 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4366 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4367 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4368 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4369 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4370 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4371 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4372 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4373 |
Q62702-A764 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 4374 |
Q62702-F1549 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 4375 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 4376 |
Q62702-P55 |
Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current |
Siemens |
| 4377 |
REF5010 |
Low Noise, Very Low Drift, Precision Voltage Reference |
Texas Instruments |
| 4378 |
REF5010AID |
Low Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -40 to 125 |
Texas Instruments |
| 4379 |
REF5010AIDGKR |
Low Noise, Very Low Drift, Precision Voltage Reference 8-VSSOP -40 to 125 |
Texas Instruments |
| 4380 |
REF5010AIDGKT |
Low Noise, Very Low Drift, Precision Voltage Reference 8-VSSOP -40 to 125 |
Texas Instruments |
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