| No. |
Part Name |
Description |
Manufacturer |
| 4351 |
FSYE913A0D1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4352 |
FSYE913A0D3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4353 |
FSYE913A0R |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4354 |
FSYE913A0R1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4355 |
FSYE913A0R3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4356 |
FSYE913A0R4 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4357 |
FSYE923A0D |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4358 |
FSYE923A0D1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4359 |
FSYE923A0D3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4360 |
FSYE923A0R |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4361 |
FSYE923A0R1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4362 |
FSYE923A0R3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4363 |
FSYE923A0R4 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 4364 |
FT6110 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4365 |
FT6110D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4366 |
FT6111 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4367 |
FT6111D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4368 |
FT6112 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4369 |
FT6112D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4370 |
FT6120 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4371 |
FT6120D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4372 |
FT6121 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4373 |
FT6121D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4374 |
FT6122 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4375 |
FT6122D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 4376 |
FW906 |
Power MOSFET 30 V, 8.0 A, 24 mOhm Complementary |
ON Semiconductor |
| 4377 |
FX20ASJ-03 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 4378 |
FX20ASJ-03 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 4379 |
FX20ASJ-06 |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 4380 |
FX20ASJ-06 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
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