| No. |
Part Name |
Description |
Manufacturer |
| 4381 |
KBU6A |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 4382 |
KBU6B |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 4383 |
KBU6D |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 4384 |
KBU6G |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 4385 |
KBU6J |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 4386 |
KBU6K |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) |
Panjit International Inc |
| 4387 |
KBU8A |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes) |
Panjit International Inc |
| 4388 |
KBU8B |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes) |
Panjit International Inc |
| 4389 |
KBU8D |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes) |
Panjit International Inc |
| 4390 |
KBU8G |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes) |
Panjit International Inc |
| 4391 |
KBU8J |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes) |
Panjit International Inc |
| 4392 |
KBU8K |
SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes) |
Panjit International Inc |
| 4393 |
KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica |
SANYO |
| 4394 |
KR-1200AAE |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
| 4395 |
KR-1200AUL |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica |
SANYO |
| 4396 |
KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica |
SANYO |
| 4397 |
KR-1700AUL |
Nominal capacity: 1700mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 17.0mOhm cadnica |
SANYO |
| 4398 |
LAS1900 |
Analog IC |
Morrihan International |
| 4399 |
LC371100SM |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4400 |
LC371100SM-10LV |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4401 |
LC371100SM-20LV |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4402 |
LC371100SP |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4403 |
LC371100SP-10LV |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4404 |
LC371100SP-20LV |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4405 |
LC371100ST |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4406 |
LC371100ST-10LV |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4407 |
LC371100ST-20LV |
1 MEG (131072 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4408 |
LC372100PM |
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4409 |
LC372100PM-10LV |
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
| 4410 |
LC372100PM-20LV |
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate |
SANYO |
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