| No. |
Part Name |
Description |
Manufacturer |
| 4381 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 4382 |
1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
| 4383 |
1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor |
GHz Technology |
| 4384 |
1415312 |
Bobbin Type Inductors |
C&D Technologies |
| 4385 |
1415440 |
Bobbin Type Inductors |
C&D Technologies |
| 4386 |
1415449 |
Bobbin Type Inductors |
C&D Technologies |
| 4387 |
1415465 |
Bobbin Type Inductors |
C&D Technologies |
| 4388 |
1415513 |
Bobbin Type Inductors |
C&D Technologies |
| 4389 |
1415514 |
Bobbin Type Inductors |
C&D Technologies |
| 4390 |
1415517 |
Bobbin Type Inductors |
C&D Technologies |
| 4391 |
1415604 |
Bobbin Type Inductors |
C&D Technologies |
| 4392 |
1415605 |
Bobbin Type Inductors |
C&D Technologies |
| 4393 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4394 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4395 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4396 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4397 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4398 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4399 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
| 4400 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4401 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4402 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4403 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4404 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4405 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 4406 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4407 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4408 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4409 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4410 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
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