| No. |
Part Name |
Description |
Manufacturer |
| 4381 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4382 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4383 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4384 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4385 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4386 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4387 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4388 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4389 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4390 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4391 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4392 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4393 |
WK164 12-1 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4394 |
WK164 12-2 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4395 |
WK164 12-3 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4396 |
WK164 12-4 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4397 |
WK164 14-1 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4398 |
WK164 14-2 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4399 |
WK164 14-3 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4400 |
WK164 14-4 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4401 |
WK164 15-1 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4402 |
WK164 15-2 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4403 |
WK164 16-1 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4404 |
WK164 16-2 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4405 |
WK164 16-3 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4406 |
WK164 18 |
Optoelectronic coupler |
Tesla Elektronicke |
| 4407 |
ZS1031 |
ZS1031 DEVICE SPEC |
PerkinElmer Optoelectronics |
| 4408 |
ZS1052 |
ZS1052 |
PerkinElmer Optoelectronics |
| 4409 |
ZS1052-12 |
ZS1052-12 |
PerkinElmer Optoelectronics |
| | | |
