No. |
Part Name |
Description |
Manufacturer |
4411 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
4412 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
4413 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
4414 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
4415 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
4416 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
4417 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
4418 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
4419 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
4420 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
4421 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
4422 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
4423 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
4424 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
4425 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
4426 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
4427 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
4428 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
4429 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
4430 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
4431 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
4432 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
4433 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
4434 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
4435 |
2N688 |
25A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
4436 |
2N689 |
25A silicon controlled rectifier. Vrsom 600V. |
General Electric Solid State |
4437 |
2N690 |
25A silicon controlled rectifier. Vrsom 720V. |
General Electric Solid State |
4438 |
2N691 |
25A silicon controlled rectifier. Vrsom 840V. |
General Electric Solid State |
4439 |
2N692 |
25A silicon controlled rectifier. Vrsom 960V. |
General Electric Solid State |
4440 |
2N696 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
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