| No. |
Part Name |
Description |
Manufacturer |
| 4441 |
2N5632 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4442 |
2N5632 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4443 |
2N5635 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4444 |
2N5635 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4445 |
2N5636 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4446 |
2N5636 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4447 |
2N5637 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4448 |
2N5637 |
Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4449 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4450 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4451 |
2N5679 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 4452 |
2N5679 |
Trans GP BJT PNP 100V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 4453 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4454 |
2N5680 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 4455 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4456 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4457 |
2N5681 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 4458 |
2N5681 |
Trans GP BJT NPN 100V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 4459 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4460 |
2N5682 |
1.0 Amp 10 watt NPN-PNP complementary power. |
Fairchild Semiconductor |
| 4461 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
| 4462 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
| 4463 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
| 4464 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
| 4465 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
| 4466 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 4467 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
| 4468 |
2N5830 |
Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 4469 |
2N5835 |
NPN silicon high frequency transistor 2.5GHz - 10mAdc |
Motorola |
| 4470 |
2N5837 |
NPN silicon high frequency transistor 1.7GHz - 100mAdc |
Motorola |
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