DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 25

Datasheets found :: 12482
Page: | 145 | 146 | 147 | 148 | 149 | 150 | 151 | 152 | 153 |
No. Part Name Description Manufacturer
4441 MAX6734KASVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4442 MAX6734KASYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4443 MAX6735KALTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4444 MAX6735KARVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4445 MAX6735KASDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4446 MAX6735KASHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4447 MAX6735KASVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4448 MAX6735KASYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
4449 MAX6736XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4450 MAX6736XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4451 MAX6736XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4452 MAX6736XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4453 MAX6736XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4454 MAX6736XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4455 MAX6736XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4456 MAX6736XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4457 MAX6736XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4458 MAX6736XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4459 MAX6736XKSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4460 MAX6736XKSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4461 MAX6736XKSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4462 MAX6736XKVRD3-T Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4463 MAX6737XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4464 MAX6737XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4465 MAX6737XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4466 MAX6737XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4467 MAX6737XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4468 MAX6737XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4469 MAX6737XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
4470 MAX6737XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 12482
Page: | 145 | 146 | 147 | 148 | 149 | 150 | 151 | 152 | 153 |



© 2024 - www Datasheet Catalog com