| No. |
Part Name |
Description |
Manufacturer |
| 4441 |
TPS1120 |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 4442 |
TPS1120D |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 4443 |
TPS1120DG4 |
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC |
Texas Instruments |
| 4444 |
TPS1120DR |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 4445 |
TPS1120Y |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 4446 |
TPS1120YD |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 4447 |
TSD4M150 |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 4448 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 4449 |
TSD4M150F |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 4450 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 4451 |
TSD4M150V |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 4452 |
TZ400BD |
30 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4453 |
TZ402BD |
15 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4454 |
TZ403BD |
15 V, 60 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4455 |
TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4456 |
TZ404CY |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 4457 |
UFT5-28 |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 4458 |
UFT5-28SL |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 4459 |
UGF27025 |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 4460 |
UGF27025F |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 4461 |
UPA1717G-E1 |
P-channel enhancement type power MOS FET |
NEC |
| 4462 |
UPA1717G-E2 |
P-channel enhancement type power MOS FET |
NEC |
| 4463 |
UPA1720G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4464 |
UPA1720G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4465 |
UPA1721G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4466 |
UPA1721G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4467 |
UPA1722G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4468 |
UPA1722G-E2 |
N-channel enhancement type power MOS FET |
NEC |
| 4469 |
UPA1723G-E1 |
N-channel enhancement type power MOS FET |
NEC |
| 4470 |
UPA1723G-E2 |
N-channel enhancement type power MOS FET |
NEC |
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