| No. |
Part Name |
Description |
Manufacturer |
| 4441 |
CP1A-12V |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4442 |
CP1A-12V-X |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4443 |
CP1A-12V-Z |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4444 |
CP1ASA-12V |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4445 |
CP1ASA-12V-X |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4446 |
CP1ASA-12V-Z |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4447 |
CP1SA-12V |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4448 |
CP1SA-12V-X |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4449 |
CP1SA-12V-Z |
ULTRA-MINIATURE, LOW PROFILE AUTOMOTIVE RELAY |
Matsushita Electric Works(Nais) |
| 4450 |
CR02 |
LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4451 |
CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4452 |
CR02AM-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4453 |
CR02AM-6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4454 |
CR02AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4455 |
CR02AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4456 |
CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4457 |
CR03AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4458 |
CR03AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4459 |
CR04 |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4460 |
CR04AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4461 |
CR04AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4462 |
CR04AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4463 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4464 |
CR05AS-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4465 |
CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4466 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4467 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4468 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4469 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4470 |
CR10CY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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