No. |
Part Name |
Description |
Manufacturer |
4441 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4442 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4443 |
IRF520FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4444 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
4445 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
4446 |
IRF530 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4447 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
4448 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
4449 |
IRF530FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4450 |
IRF530FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
4451 |
IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
4452 |
IRF530FP |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
4453 |
IRF531 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
4454 |
IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
4455 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
4456 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
4457 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
4458 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
4459 |
IRF533FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
4460 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
4461 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
4462 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
4463 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
4464 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
4465 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4466 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4467 |
IRF620FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4468 |
IRF620FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
4469 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
4470 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
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