No. |
Part Name |
Description |
Manufacturer |
4441 |
IW4502BN |
Strobed hex inverter/buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
4442 |
IW4503BD |
Hex buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
4443 |
IW4503BN |
Hex buffer, high-voltage silicon-gate CMOS |
INTEGRAL |
4444 |
IW4516 |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
4445 |
IW4516B |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
4446 |
IW4516BD |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
4447 |
IW4516BN |
Presettable Up/Down Counter High-Voltage Silicon-Gate CMOS |
INTEGRAL |
4448 |
IW4520BD |
Dual up-counter, high-voltage silicon-gate CMOS |
INTEGRAL |
4449 |
IW4520BN |
Dual up-counter, high-voltage silicon-gate CMOS |
INTEGRAL |
4450 |
IW4541BD |
Programmable timer, high-performance silicon-gate CMOS |
INTEGRAL |
4451 |
IW4541BN |
Programmable timer, high-performance silicon-gate CMOS |
INTEGRAL |
4452 |
IXCP10M90S |
Gate Controlled Current Regulators |
IXYS |
4453 |
IXCY10M90S |
Gate Controlled Current Regulators |
IXYS |
4454 |
IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances |
IXYS Corporation |
4455 |
IXTA180N055T |
Trench Gate Power MOSFET |
IXYS Corporation |
4456 |
IXTP180N055T |
Trench Gate Power MOSFET |
IXYS Corporation |
4457 |
IXTQ180N055T |
Trench Gate Power MOSFET |
IXYS Corporation |
4458 |
JBT6K48-AS |
Gate Driver for TFT LCD Panel |
TOSHIBA |
4459 |
JBT6L78-AS |
Gate Driver for TFT LCD Panel |
TOSHIBA |
4460 |
JM38510/00501BCA |
Dual 2-Wide 2-Input AND-OR-invert Gates (One Gate Expandable) |
Texas Instruments |
4461 |
JM38510/05003BCA |
CMOS Triple 3-Input NAND Gate 14-CDIP -55 to 125 |
Texas Instruments |
4462 |
JM38510_01602BC |
Quad 2-Input AND Gate with Open-Collector Outputs |
National Semiconductor |
4463 |
KA3162 |
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET |
Fairchild Semiconductor |
4464 |
KA3162 |
V(cc): 36V; single IGBT gate driver. For single insulated gate bipolar TR, single MOSFET |
Fairchild Semiconductor |
4465 |
KGL4203 |
10-Gbps EXOR/NOR IC 0.2��m Gate Length GaAs MESFET Technology |
OKI electronic components |
4466 |
KGL4203 |
10-Gbps EXOR/NOR IC 0.2m Gate Length GaAs MESFET Technology |
OKI electronic eomponets |
4467 |
KGL4205 |
10-Gbps D-Flip Flop IC 0.2��m Gate Length GaAs MESFET Technology |
OKI electronic components |
4468 |
KGL4205 |
10-Gbps D-Flip Flop IC 0.2m Gate Length GaAs MESFET Technology |
OKI electronic eomponets |
4469 |
KGL4215 |
10-Gbps Decision Circuit 0.2��m Gate Length GaAs MESFET Technology |
OKI electronic components |
4470 |
KGL4215 |
10-Gbps Decision Circuit 0.2m Gate Length GaAs MESFET Technology |
OKI electronic eomponets |
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