| No. |
Part Name |
Description |
Manufacturer |
| 4441 |
PMEG6002TV |
0.2 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4442 |
PMEG6010CEH |
1 A very low VF MEGA Schottky barrier rectifier |
Nexperia |
| 4443 |
PMEG6010CEH |
1 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4444 |
PMEG6010CEJ |
1 A very low VF MEGA Schottky barrier rectifiers |
Nexperia |
| 4445 |
PMEG6010CEJ |
1 A very low VF MEGA Schottky barrier rectifiers |
NXP Semiconductors |
| 4446 |
PMEGXX10BEA |
1 A very low VF MEGA Schottky barrier rectifier |
Philips |
| 4447 |
PMEGXX10BEV |
1 A very low VF MEGA Schottky barrier rectifier |
Philips |
| 4448 |
PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection |
Vishay |
| 4449 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4450 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4451 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4452 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4453 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4454 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4455 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4456 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 4457 |
Q62702-A764 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 4458 |
Q62702-F1549 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 4459 |
Q62702-F1559 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 4460 |
Q62702-P55 |
Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current |
Siemens |
| 4461 |
REF5010 |
Low Noise, Very Low Drift, Precision Voltage Reference |
Texas Instruments |
| 4462 |
REF5010AID |
Low Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -40 to 125 |
Texas Instruments |
| 4463 |
REF5010AIDGKR |
Low Noise, Very Low Drift, Precision Voltage Reference 8-VSSOP -40 to 125 |
Texas Instruments |
| 4464 |
REF5010AIDGKT |
Low Noise, Very Low Drift, Precision Voltage Reference 8-VSSOP -40 to 125 |
Texas Instruments |
| 4465 |
REF5010AIDR |
Low Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -40 to 125 |
Texas Instruments |
| 4466 |
REF5010ID |
Low Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -40 to 125 |
Texas Instruments |
| 4467 |
REF5010IDGKR |
Low Noise, Very Low Drift, Precision Voltage Reference 8-VSSOP -40 to 125 |
Texas Instruments |
| 4468 |
REF5010IDGKT |
Low Noise, Very Low Drift, Precision Voltage Reference 8-VSSOP -40 to 125 |
Texas Instruments |
| 4469 |
REF5020 |
Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE |
Texas Instruments |
| 4470 |
REF5020-EP |
Enhanced Product Low-Noise, Very Low Drift, Precision Voltage Reference 8-SOIC -55 to 125 |
Texas Instruments |
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