No. |
Part Name |
Description |
Manufacturer |
4471 |
SM5901AF |
compression and non compression type anti-shock memory controller with built-in 1M DRAM |
Nippon Precision Circuits Inc |
4472 |
SMJ44400 |
1M x 4 DRAM |
Austin Semiconductor |
4473 |
SMJ44400-10HRM |
1M x 4 DRAM dynamic random-access memory |
Austin Semiconductor |
4474 |
SMJ44400-10JDM |
1M x 4 DRAM dynamic random-access memory |
Austin Semiconductor |
4475 |
SMJ44400-12HRM |
1M x 4 DRAM dynamic random-access memory |
Austin Semiconductor |
4476 |
SMJ44400-12JDM |
1M x 4 DRAM dynamic random-access memory |
Austin Semiconductor |
4477 |
SMJ44400-80HRM |
1M x 4 DRAM dynamic random-access memory |
Austin Semiconductor |
4478 |
SMJ44400-80JDM |
1M x 4 DRAM dynamic random-access memory |
Austin Semiconductor |
4479 |
T431616A |
1M x 16 SDRAM |
Taiwan Memory Technology |
4480 |
T431616A-7C |
1M x 16 SDRAM |
Taiwan Memory Technology |
4481 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
4482 |
T431616A-7CI |
1M x 16 SDRAM |
Taiwan Memory Technology |
4483 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
4484 |
T431616A-7S |
1M x 16 SDRAM |
Taiwan Memory Technology |
4485 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
4486 |
T431616A-7SI |
1M x 16 SDRAM |
Taiwan Memory Technology |
4487 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
4488 |
TC531001CF |
150ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
4489 |
TC531001CP |
120ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
4490 |
TC531024F-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
4491 |
TC531024F-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
4492 |
TC531024P-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
4493 |
TC531024P-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
4494 |
TC55VDM536AFFN15 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
4495 |
TC55VDM536AFFN16 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
4496 |
TC55VDM536AFFN20 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
4497 |
TC55VDM536AFFN22 |
36M 3.3V Pipelined NtRAM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
4498 |
TC55WDM536AFFN15 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
4499 |
TC55WDM536AFFN16 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
4500 |
TC55WDM536AFFN20 |
36M 2.5V Pipelined NtRAM TM 1M Word by 36Bit SYNCHRONOUS NO-TURNAROUND STATIC RAM |
TOSHIBA |
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