| No. |
Part Name |
Description |
Manufacturer |
| 4501 |
BU52055GWZ-E2 |
Omnipolar Detection Hall ICs |
ROHM |
| 4502 |
BU52061NVX |
Omnipolar Detection Hall ICs |
ROHM |
| 4503 |
BU52061NVX-TR |
Omnipolar Detection Hall ICs |
ROHM |
| 4504 |
BU52075GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 4505 |
BU52075GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 4506 |
BU52077GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 4507 |
BU52077GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 4508 |
BU52078GWZ |
Omnipolar Detection Hall IC |
ROHM |
| 4509 |
BU52078GWZ-E2 |
Omnipolar Detection Hall IC |
ROHM |
| 4510 |
BUD42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 4511 |
BUD42D-001 |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 4512 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4513 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 4514 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4515 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4516 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 4517 |
BUF405A |
Transistor polarity NPN Voltage Vce sat max 2.8 V Voltage Vceo 450 V Current Ic @ Vce sat 2.5 A Time fall @ Ic 0.1 ?s Current Ic av. 7.5 A Power Ptot 80 W Voltage Vces 1000 V |
SGS Thomson Microelectronics |
| 4518 |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 4519 |
BUK856-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
| 4520 |
BUK856-800 |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 4521 |
BUK856-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
| 4522 |
BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
| 4523 |
BUL146-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 4524 |
BUL146F |
Switchmode NPN bipolar power transistor for switching power supply applications |
Motorola |
| 4525 |
BUL147-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 4526 |
BUL42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 4527 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 4528 |
BUL44-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications |
ON Semiconductor |
| 4529 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 4530 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
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