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Datasheets for -EFFECT TRAN

Datasheets found :: 1036
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No. Part Name Description Manufacturer
451 2N5911 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
452 2N5912 Dual N-Channel Junction Field-Effect Transistor CCSIT-CE
453 2N5912 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
454 2N6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
455 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
456 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
457 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
458 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
459 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
460 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
461 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
462 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
463 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
464 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
465 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
466 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
467 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
468 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
469 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
470 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
471 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
472 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
473 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
474 2N7000 N-channel enhancement mode field-effect transistor Philips
475 2N7002 N-channel enhancement mode field-effect transistor Philips
476 2SJ11 Field-effect transistor TOSHIBA
477 2SJ12 Field-effect transistor TOSHIBA
478 2SJ125 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Isahaya Electronics Corporation
479 2SJ13 Field-effect transistor TOSHIBA
480 2SJ498 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. Isahaya Electronics Corporation


Datasheets found :: 1036
Page: | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 |



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