No. |
Part Name |
Description |
Manufacturer |
451 |
2N5911 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
452 |
2N5912 |
Dual N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
453 |
2N5912 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
454 |
2N6449 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
455 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
456 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
457 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
458 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
459 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
460 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
461 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
462 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
463 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
464 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
465 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
466 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
467 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
468 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
469 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
470 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
471 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
472 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
473 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
474 |
2N7000 |
N-channel enhancement mode field-effect transistor |
Philips |
475 |
2N7002 |
N-channel enhancement mode field-effect transistor |
Philips |
476 |
2SJ11 |
Field-effect transistor |
TOSHIBA |
477 |
2SJ12 |
Field-effect transistor |
TOSHIBA |
478 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
479 |
2SJ13 |
Field-effect transistor |
TOSHIBA |
480 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
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