| No. |
Part Name |
Description |
Manufacturer |
| 451 |
TD62583APG |
Single-transistor array (common-emitter) |
TOSHIBA |
| 452 |
TD62593AFNG |
Single-transistor array (common-emitter) |
TOSHIBA |
| 453 |
TD62594AFNG |
Single-transistor array (common-emitter) |
TOSHIBA |
| 454 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 455 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 456 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 457 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 458 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 459 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 460 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 461 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 462 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 463 |
TIL318 |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 464 |
TIL31B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 465 |
TIL33B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 466 |
TIL34B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 467 |
TLR101 |
GaP Light-Emitting diode |
TOSHIBA |
| 468 |
TLR102 |
GaP Light-Emitting diode |
TOSHIBA |
| 469 |
TLR103 |
GaP Light-Emitting diode |
TOSHIBA |
| 470 |
TLR104 |
GaP Light-Emitting diode, panel Circuit Indicator and Logic Circuit Condition Indicator |
TOSHIBA |
| 471 |
TOX9004 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 472 |
TOX9005 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 473 |
TOX9006 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 474 |
TOX9007 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 475 |
WK164 02-1 |
Light-Emitting diode 950nm |
Tesla Elektronicke |
| 476 |
WK164 02-2 |
Light-Emitting diode 950nm |
Tesla Elektronicke |
| 477 |
WK164 02-3 |
Light-Emitting diode 950nm |
Tesla Elektronicke |
| 478 |
WK164 02-4 |
Light-Emitting diode 950nm |
Tesla Elektronicke |
| 479 |
WK164 03-1 |
High-speed light-emitting diode 810nm |
Tesla Elektronicke |
| 480 |
WK164 03-2 |
High-speed light-emitting diode 810nm |
Tesla Elektronicke |
| | | |
