| No. |
Part Name |
Description |
Manufacturer |
| 451 |
BFR182 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 452 |
BFR182W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 453 |
BFR183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
| 454 |
BFR183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
| 455 |
BFR193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 456 |
BFR193W |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 457 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 458 |
BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
Siemens |
| 459 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
| 460 |
BFS482 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) |
Siemens |
| 461 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 462 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 463 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 464 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 465 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 466 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 467 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 468 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 469 |
BQ2010SN |
-Gas Gauge IC |
Texas Instruments |
| 470 |
BQ2011KSN |
-Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 471 |
BQ2011SN |
-Gas Gauge IC for High Discharge Rates |
Texas Instruments |
| 472 |
BTY79 |
P-Gate Silicon Thyristor |
Philips |
| 473 |
BTY79-1000R |
P-Gate Silicon Thyristor |
Philips |
| 474 |
BTY79-400R |
P-Gate Silicon Thyristor |
Philips |
| 475 |
BTY79-500R |
P-Gate Silicon Thyristor |
Philips |
| 476 |
BTY79-600R |
P-Gate Silicon Thyristor |
Philips |
| 477 |
BTY79-800R |
P-Gate Silicon Thyristor |
Philips |
| 478 |
BTY87 |
P-Gate Silicon Thyristor |
Philips |
| 479 |
BTY87-400R |
P-Gate Silicon Thyristor |
Philips |
| 480 |
BTY87-500R |
P-Gate Silicon Thyristor |
Philips |
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