No. |
Part Name |
Description |
Manufacturer |
451 |
ACM1602Y-RLYW-T |
2.7-5.5V; 16characters x 2lines; dot size:0.56x0.61mm; liquid crystal display |
AZ Displays |
452 |
CR056 |
Diode Current Reg. 100V 0.616mA 2-Pin TO-18 |
New Jersey Semiconductor |
453 |
D2525P21 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 192.1. Wavelength 1560.61. Tolerance +-0.4nm. |
Agere Systems |
454 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
455 |
E2502H21 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1560.61 nm. Frequency 192.1 THz. |
Agere Systems |
456 |
E2502H51 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1536.61 nm. Frequency 195.1 THz. |
Agere Systems |
457 |
FRF450D |
9A/ 500V/ 0.615 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
458 |
FRF450H |
9A/ 500V/ 0.615 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
459 |
FRF450R |
9A/ 500V/ 0.615 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
460 |
FSL234D |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
461 |
FSL234D1 |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
462 |
FSL234D3 |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
463 |
FSL234R |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
464 |
FSL234R1 |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
465 |
FSL234R3 |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
466 |
FSL234R4 |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
467 |
JANSR2N7397 |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET |
Intersil |
468 |
KM416L8031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
469 |
KM416L8031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
470 |
KM416L8031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
471 |
KM416L8031BT-G(F)0 |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
472 |
KM416L8031BT-G(F)Y |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
473 |
KM416L8031BT-G(F)Z |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
474 |
KM416L8031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
475 |
KM416L8031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
476 |
KM416L8031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
477 |
KM44L32031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
478 |
KM44L32031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
479 |
KM44L32031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
480 |
KM44L32031BT-G(F)0 |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
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