| No. |
Part Name |
Description |
Manufacturer |
| 451 |
M29F040-70XN6TR |
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
ST Microelectronics |
| 452 |
MBD501 |
High-voltage silicon hot-carrier (schottky barrier) detector and switching diode 50-70 Volts |
Motorola |
| 453 |
MCR380-70 |
BEAM-FIRED Integrated Gate Thyristor 380A RMS, 700V |
Motorola |
| 454 |
MCR470-70 |
BEAM-FIRED Integrated Gate Thyristor 470A RMS, 700V |
Motorola |
| 455 |
MCR80-70 |
THYRISTOR 80 AMPERES RMS, 700 VOLTS |
Motorola |
| 456 |
MCR800-70 |
BEAM-FIRED Integrated Gate Thyristor 800A RMS, 700V |
Motorola |
| 457 |
MMBD501L |
High-voltage silicon hot-carrier (schottky barrier) detector and switching diode 50-70 Volts |
Motorola |
| 458 |
MMBD701L |
High-voltage silicon hot-carrier (schottky barrier) detector and switching diode 50-70 Volts |
Motorola |
| 459 |
MSM5116160-70JS |
1,048,576-word x 16-bit dynamic RAM |
OKI electronic components |
| 460 |
MSM5116160-70TK |
1,048,576-word x 16-bit dynamic RAM |
OKI electronic components |
| 461 |
MSM5116160-70TL |
1,048,576-word x 16-bit dynamic RAM |
OKI electronic components |
| 462 |
MSM5117100-70JS |
16 Meg x 1-bit dynamic RAM |
OKI electronic components |
| 463 |
MSM5117100-70TK |
16 Meg x 1-bit dynamic RAM |
OKI electronic components |
| 464 |
MSM5117100-70TL |
16 Meg x 1-bit dynamic RAM |
OKI electronic components |
| 465 |
MSM51V16100-70JS |
16,777,216-word x 1-bit dynamic RAM |
OKI electronic components |
| 466 |
MSM51V16100-70TK |
16,777,216-word x 1-bit dynamic RAM |
OKI electronic components |
| 467 |
MSM51V16100-70TL |
16,777,216-word x 1-bit dynamic RAM |
OKI electronic components |
| 468 |
MSM51V17100-70JS |
16,777,216-word x 1-bit dynamic RAM |
OKI electronic components |
| 469 |
MSM51V17100-70TS-K |
16,777,216-word x 1-bit dynamic RAM |
OKI electronic components |
| 470 |
MSM51V17100-70TS-L |
16,777,216-word x 1-bit dynamic RAM |
OKI electronic components |
| 471 |
N28F020-70 |
2048(256 x 8) CMOS flash memory. Access speed 70 ns |
Intel |
| 472 |
NX29F010-70PL |
70 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memory |
NexFlash |
| 473 |
NX29F010-70PLI |
70 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memory |
NexFlash |
| 474 |
NX29F010-70T |
70 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memory |
NexFlash |
| 475 |
NX29F010-70TI |
70 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memory |
NexFlash |
| 476 |
NX29F010-70W |
70 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memory |
NexFlash |
| 477 |
P28F020-70 |
2048(256 x 8) CMOS flash memory. Access speed 70 ns |
Intel |
| 478 |
PH1090-700B |
1030-1090 MHz,700 W, 32 ms pulse,avionic pulsed power transistor |
MA-Com |
| 479 |
PH1090-700B |
Avionics Pulsed Power Transistor, 700 Watts,1.03-1.09 GHz, 32 mS Pulse, 2% Duty |
Tyco Electronics |
| 480 |
PM39F010-70JC |
1 Mbit 5.0V CMOS flash memory, 70ns |
PMC-Sierra Inc |
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