| No. |
Part Name |
Description |
Manufacturer |
| 451 |
DX30AJ-80S-CP3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 452 |
DX30AJ-80S-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 453 |
DX30AJ-80S-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 454 |
DX30AJ-80S-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 455 |
DX30AJ-80SE |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 456 |
DX30AJ-80SE-CP3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 457 |
DX30AJ-80SE-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 458 |
DX30AJ-80SE-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 459 |
DX30AJ-80SE-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 460 |
DX30AJ-80SW-CP3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 461 |
DX30AJ-80SW-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 462 |
DX30AJ-80SW-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 463 |
DX30AJ-80SW-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 464 |
EV-VN7010AJ |
VN7010AJ-E Evaluation Board |
ST Microelectronics |
| 465 |
EV-VND7020AJ |
VND7020AJ-E Evaluation Board |
ST Microelectronics |
| 466 |
EV-VND7030AJ |
VND7030AJ-E Evaluation Board |
ST Microelectronics |
| 467 |
EV-VND7050AJ |
VND7050AJ-E Evaluation Board |
ST Microelectronics |
| 468 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 469 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 470 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 471 |
HM514400AJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
| 472 |
HM514400AJ-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
| 473 |
HM514400AJ-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
| 474 |
HM514800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 475 |
HM514800AJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 476 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 477 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 478 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 479 |
HM51S4800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 480 |
HM51S4800AJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
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