| No. |
Part Name |
Description |
Manufacturer |
| 451 |
SMAJ4755A |
Pd=1.0W, Vz=43V zener diode |
MCC |
| 452 |
SMAJ4756A |
Pd=1.0W, Vz=47V zener diode |
MCC |
| 453 |
SMAJ4757A |
Pd=1.0W, Vz=51V zener diode |
MCC |
| 454 |
SMAJ4758A |
Pd=1.0W, Vz=56V zener diode |
MCC |
| 455 |
SMAJ4759A |
Pd=1.0W, Vz=62V zener diode |
MCC |
| 456 |
SMAJ4760A |
Pd=1.0W, Vz=68V zener diode |
MCC |
| 457 |
SMAJ4761A |
Pd=1.0W, Vz=75V zener diode |
MCC |
| 458 |
SMAJ4762A |
Pd=1.0W, Vz=82V zener diode |
MCC |
| 459 |
SMAJ4763A |
Pd=1.0W, Vz=91V zener diode |
MCC |
| 460 |
SMAJ4764A |
Pd=1.0W, Vz=100V zener diode |
MCC |
| 461 |
T14L256A-8J |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 462 |
T14L256A-8P |
8ns; -0.5 to 4.6V; 1.0W; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 463 |
T14M1024-10H |
10ns; -0.5 to 7.0V; 1.0W; 50mA; 128 x 8 high speed CMOS static RAM |
TM Technology |
| 464 |
T14M1024-10J |
10ns; -0.5 to 7.0V; 1.0W; 50mA; 128 x 8 high speed CMOS static RAM |
TM Technology |
| 465 |
T14M1024-10P |
10ns; -0.5 to 7.0V; 1.0W; 50mA; 128 x 8 high speed CMOS static RAM |
TM Technology |
| 466 |
T14M256A-8J |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 467 |
T14M256A-8P |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
| 468 |
T221160A-30J |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 469 |
T221160A-30S |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 470 |
T221160A-35J |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 471 |
T221160A-35S |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
| 472 |
T224162B |
4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page mode |
TM Technology |
| 473 |
T2316405A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
| 474 |
T2316407A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
| 475 |
T35L3232B-3.8Q |
0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode |
TM Technology |
| 476 |
T35L3232B-4T |
0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode |
TM Technology |
| 477 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 478 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 479 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
| 480 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
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