| No. |
Part Name |
Description |
Manufacturer |
| 451 |
ER3B |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 452 |
ER3D |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 453 |
ER3J |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 454 |
ER3K |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 455 |
ES1A |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 456 |
ES1B |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 457 |
ES1D |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 458 |
ES1G |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 459 |
ES1J |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 460 |
ES1K |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 461 |
ES1M |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
| 462 |
ESM22-100N |
Triac |
SESCOSEM |
| 463 |
ESM23-100N |
Triac |
SESCOSEM |
| 464 |
FAN8100N |
Low Voltage/Low Saturation 2-CH DC Motor Driver |
Fairchild Semiconductor |
| 465 |
FDL100N50F |
N-Channel UniFETTM FRFET� MOSFET 500V, 100A, 55m? |
Fairchild Semiconductor |
| 466 |
FDP100N10 |
N-Channel PowerTrench� MOSFET 100V, 75A, 10m? |
Fairchild Semiconductor |
| 467 |
FP0100N8-G |
Fault Protection ICs |
Microchip |
| 468 |
GA100NA60U |
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package |
International Rectifier |
| 469 |
GLT6100L08LL-100ST |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 470 |
GLT6100L08LL-100TC |
100ns; Ultra low power 64K x 16 CMOS SRAM |
G-LINK Technology |
| 471 |
GLT6100L08LL-100TS |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 472 |
GLT6100L08SL-100ST |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 473 |
GLT6100L08SL-100TC |
100ns; Ultra low power 64K x 16 CMOS SRAM |
G-LINK Technology |
| 474 |
GLT6100L08SL-100TS |
100ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 475 |
GS88236B-100I |
100MHz 100ns 256K x 36 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 476 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 477 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 478 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 479 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 480 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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