| No. |
Part Name |
Description |
Manufacturer |
| 451 |
MTB16N25E |
16 Amp D2PAK Surface Mount Products, N-Channel, VDSS 250 |
ON Semiconductor |
| 452 |
MTB16N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount |
ON Semiconductor |
| 453 |
MTP16N25E |
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM |
Motorola |
| 454 |
MTP16N25E |
OBSOLETE - 16 Amp TO-220AB, N-Channel, VDSS 250 |
ON Semiconductor |
| 455 |
MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 456 |
MTV16N50E |
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM |
Motorola |
| 457 |
MTV16N50E |
16 Amp D3PAK Surface Mount Products, N-Channel, VDSS 500 |
ON Semiconductor |
| 458 |
MTV16N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 459 |
MTW16N40E |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
Motorola |
| 460 |
MTW16N40E |
OBSOLETE - Power MOSFET 16 Amps, 400 Volts |
ON Semiconductor |
| 461 |
MTW16N40E-D |
Power MOSFET 16 Amps, 400 Volts N-Channel TO-247 |
ON Semiconductor |
| 462 |
MTY16N80E |
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
Motorola |
| 463 |
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 464 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
| 465 |
NMC2116N-20 |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 466 |
NMC2116N-20L |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 467 |
NMC2116N-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 468 |
NS32C016N-10 |
5 V, high-performance microprocessor |
National Semiconductor |
| 469 |
NS32C016N-15 |
5 V, high-performance microprocessor |
National Semiconductor |
| 470 |
NTLJD4116N |
Power MOSFET, 30 V, 4.6 A, Dual N-Channel |
ON Semiconductor |
| 471 |
NTMS4816N |
Power MOSFET, 30 V, 11 A, N-Channel |
ON Semiconductor |
| 472 |
NTMS4916N |
Power MOSFET, 30 V, 11.6 A, N-Channel |
ON Semiconductor |
| 473 |
NX8567SA473-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1547.316nm. Frequency 193.70 THz. FC-UPC connector. |
NEC |
| 474 |
NX8567SA501-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1550.116nm. Frequency 193.40 THz. FC-UPC connector. |
NEC |
| 475 |
OV5116N |
OV5116N SINGLE IC CMOS MONOCHROME CAMERA WITH NTSC ANALOG OUTPUT |
OmniVision Technologies |
| 476 |
OV5116N |
OV5116N SINGLE IC CMOS MONOCHROME CAMERA WITH NTSC ANALOG OUTPUT |
OmniVision Technologies |
| 477 |
P16NE |
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET |
ST Microelectronics |
| 478 |
P16NE |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET |
ST Microelectronics |
| 479 |
PC81716NSZ |
PC8171NSZ PC8171NSZ |
SHARP |
| 480 |
PEB2047-16N |
MTSL (Memory Time Switch Large) |
Infineon |
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