| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 452 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 453 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 454 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 455 |
2N653 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 456 |
2N654 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 457 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 458 |
2N6559 |
Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 459 |
2N6579 |
Trans GP BJT NPN 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 460 |
2N658 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 461 |
2N659 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 462 |
2N6654 |
Trans GP BJT NPN 350V 20A |
New Jersey Semiconductor |
| 463 |
2N6677 |
NPN silicon power transistor. 15 A, 350 V, 175 W. |
Motorola |
| 464 |
2N6677 |
Trans GP BJT NPN 350V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 465 |
2N6739 |
Trans GP BJT NPN 350V 10A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 466 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 467 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 468 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 469 |
2N6767 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 470 |
2N6768 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 471 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
| 472 |
2N7002-G |
MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 473 |
2N7002-HF |
Halogen Free MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 474 |
2N7002BK |
60 V, 350 mA N-channel Trench MOSFET |
Nexperia |
| 475 |
2N7002BK |
60 V, 350 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 476 |
2N7002PV |
60 V, 350 mA dual N-channel Trench MOSFET |
Nexperia |
| 477 |
2N7002PV |
60 V, 350 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 478 |
2N7006 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 0.32A |
Siliconix |
| 479 |
2SA1350 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
| 480 |
2SA1350 |
Silicon PNP Transistor |
Hitachi Semiconductor |
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