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Datasheets for AM-

Datasheets found :: 1452
Page: | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 |
No. Part Name Description Manufacturer
451 BYY90T Medium power silicon surface rectifier TUNGSRAM
452 BYY91T Medium power silicon surface rectifier TUNGSRAM
453 CA3015L Beam-Lead Operational Amplifier RCA Solid State
454 CA3018L Beam-Lead General-Purpose Transistor Array RCA Solid State
455 CA3028AL Beam-Lead Differential/Cascode Amplifier RCA Solid State
456 CA3039L Beam-Lead Diode Array, 6 matched ultra-fast low-capacitance diodes RCA Solid State
457 CA3049L Beam-Lead Dual Independent Differential Amplifiers, up to 500MHz RCA Solid State
458 CA3054L Beam-Lead Dual Independent Differential Amplifiers RCA Solid State
459 CA3084L Beam-Lead General-Purpose P-N-P Transistor Array RCA Solid State
460 CA741L Beam-Lead Operational Amplifier RCA Solid State
461 CLM2930AM-3.3 150mA Low Dropout Voltage Regulators Calogic
462 CLM2930AM-3.5 150mA Low Dropout Voltage Regulators Calogic
463 CLM2930AM-4 4 V, 150 mA low dropout voltage regulator Calogic
464 CLM2930AM-4.0 150mA Low Dropout Voltage Regulators Calogic
465 CLM2930AM-4.5 150mA Low Dropout Voltage Regulators Calogic
466 CLM2930AM-5.0 150mA Low Dropout Voltage Regulators Calogic
467 CLM2930AM-X 150mA Low Dropout Voltage Regulators Calogic
468 COMPARISON TABLE The transistors listed in this comparison table are not identical, however, their data is so similar that they can be interchanged in almost all circuits TUNGSRAM
469 CR02AM-4 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
470 CR02AM-6 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
471 CR02AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
472 CR02AM-8A MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
473 CR03AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
474 CR03AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
475 CR04AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
476 CR04AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
477 CR12AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
478 CR12AM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
479 CR2AM-8A LOW POWER USE GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
480 CR8AM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation


Datasheets found :: 1452
Page: | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 | 20 |



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