No. |
Part Name |
Description |
Manufacturer |
451 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
452 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
453 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
454 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
455 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
456 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
457 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
458 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
459 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
460 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
461 |
2425GN-150CW |
GaN Transistors |
Microsemi |
462 |
24N60C3 |
CoolMOS Power Transistor |
Infineon |
463 |
25A1400-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
464 |
2729GN-150 |
GaN Transistors |
Microsemi |
465 |
2729GN-270 |
GaN Transistors |
Microsemi |
466 |
2729GN-400 |
GaN Transistors |
Microsemi |
467 |
2729GN-500 |
GaN Transistors |
Microsemi |
468 |
2730GN-100L |
GaN Transistors |
Microsemi |
469 |
2731GN-110M |
GaN Transistors |
Microsemi |
470 |
2731GN-200M |
GaN Transistors |
Microsemi |
471 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
472 |
2AS1832F |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
473 |
2DA1201Y |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
474 |
2DA1201Y-7 |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
475 |
2DA1201YQTC |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
476 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
477 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
478 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
479 |
2DA1213O-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
480 |
2DA1213O-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
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