| No. |
Part Name |
Description |
Manufacturer |
| 451 |
ALD4201SC |
CMOS LOW VOLTAGE, LOW CHARGE INJECTION QUAD SPST ANALOG SWITCHES |
Advanced Linear Devices |
| 452 |
ALD4202M |
CMOS LOW VOLTAGE, LOW CHARGE INJECTION QUAD SPST ANALOG SWITCHES |
Advanced Linear Devices |
| 453 |
ALD4202MDC |
CMOS LOW VOLTAGE, LOW CHARGE INJECTION QUAD SPST ANALOG SWITCHES |
Advanced Linear Devices |
| 454 |
ALD4202MPC |
CMOS LOW VOLTAGE, LOW CHARGE INJECTION QUAD SPST ANALOG SWITCHES |
Advanced Linear Devices |
| 455 |
ALD4202MSC |
CMOS LOW VOLTAGE, LOW CHARGE INJECTION QUAD SPST ANALOG SWITCHES |
Advanced Linear Devices |
| 456 |
AM386SX/SXL/SXLV |
High-Performance, Low-Power, Embedded Microprocessors |
Advanced Micro Devices |
| 457 |
AN208 |
A High-Performance, Low Cost Analog Switch Family |
Vishay |
| 458 |
APD-128G064 |
128 x 64 Graphics Display with Drive Electronics and TTL Level Data Interface, Slim Profile, Low DC Power Consumption, Very Affordable |
Vishay |
| 459 |
AQV221N |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Throuh hole terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 460 |
AQV221NA |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Surface mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 461 |
AQV221NAX |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Surface mount terminal. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 462 |
AQV221NAZ |
PhotoMOS relay, RF (radio frequency) type, low C and R. AC/DC type. Output rating: load voltage 40 V, load current 150 mA. Surface mount terminal. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 463 |
AT-41511 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 464 |
AT-41511-BLK |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 465 |
AT-41511-TR1 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 466 |
AT-41533 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 467 |
AT-41533-BLK |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 468 |
AT-41533-TR1 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 469 |
AT41511 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 470 |
AT41533 |
General Purpose, Low Noise NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 471 |
AT90SC19236R |
High-performance, Low-power secureAVR� Enhanced RISC architecture. |
Atmel |
| 472 |
BAS70 |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 473 |
BAS70KFILM |
Low capacitance, low series inductance and resistance Schottky diodes |
ST Microelectronics |
| 474 |
BCY69 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 475 |
BF179C |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 476 |
BF257 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 477 |
BF258 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 478 |
BF259 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 479 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 480 |
BF457 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
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