| No. |
Part Name |
Description |
Manufacturer |
| 451 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 452 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 453 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 454 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 455 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 456 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 457 |
KM416C1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 458 |
KM416C1004CTL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 459 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 460 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 461 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 462 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 463 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 464 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 465 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 466 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 467 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 468 |
KM416C1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 469 |
KM416C1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 470 |
KM416C1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 471 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 472 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 473 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 474 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
| 475 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 476 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
| 477 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 478 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 479 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 480 |
KM416C254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
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