No. |
Part Name |
Description |
Manufacturer |
451 |
FLC21-FAMILY |
LOW POWER FIRE LIGHTER CIRCUIT |
SGS Thomson Microelectronics |
452 |
FP |
Industrial, Flameproof, Small Size, Low Cost, Exceptional Frequency Characteristics, Electroplated, Tin-Lead Solder Finish Leads |
Vishay |
453 |
FQU6N50C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary planar stripe, DMOS technology |
Fairchild Semiconductor |
454 |
H02N60 |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
455 |
H02N60E |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
456 |
H02N60F |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
457 |
H02N60I |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
458 |
H02N60J |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
459 |
H06N60 |
N-Channel Power Field Effect Transistor |
Hi-Sincerity Microelectronics |
460 |
HD100145 |
16x4 Read/Write Register File |
Hitachi Semiconductor |
461 |
HD100145F |
16x4 Read/Write Register File |
Hitachi Semiconductor |
462 |
HD10145 |
64-bit Register File |
Hitachi Semiconductor |
463 |
HD74AC670 |
4 x 4 Register File with 3-State Output |
Hitachi Semiconductor |
464 |
HD74HC670 |
4-by-4 Register File (with 3-state outputs) |
Hitachi Semiconductor |
465 |
HD74LS170 |
4-by-4 Register File |
Hitachi Semiconductor |
466 |
HD74LS170 |
4-by-4 Register File with Open Collector output |
Hitachi Semiconductor |
467 |
HD74LS670 |
4 BY 4 REGISTER FILE |
Hitachi Semiconductor |
468 |
HD74LS670 |
4-by-4 Register File with 3-state outputs |
Hitachi Semiconductor |
469 |
IDT77301 |
ATM 1-to-4 Demultiplexer FIFO |
IDT |
470 |
IDT77301L12PF |
ATM 1-to-4 Demultiplexer FIFO |
IDT |
471 |
IDT77301L12PF8 |
ATM 1-to-4 Demultiplexer FIFO |
IDT |
472 |
IDT77301L12PFI |
ATM 1-to-4 Demultiplexer FIFO |
IDT |
473 |
IDT77301L12PFI8 |
ATM 1-to-4 Demultiplexer FIFO |
IDT |
474 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
475 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
476 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
477 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
478 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
479 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
480 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
| | | |