| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 452 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 453 |
2N2368 |
Transistor, high speed saturated switches |
SGS-ATES |
| 454 |
2N2369 |
NPN high speed saturated switch. |
Fairchild Semiconductor |
| 455 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 456 |
2N2369 |
Transistor, high speed saturated switches |
SGS-ATES |
| 457 |
2N2369A |
NPN high speed saturated switch. |
Fairchild Semiconductor |
| 458 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 459 |
2N2369A |
Transistor, high speed saturated switches |
SGS-ATES |
| 460 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 461 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 462 |
2N2369ADCSM |
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
| 463 |
2N2400 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 464 |
2N2401 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 465 |
2N2402 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 466 |
2N2475 |
Transistor, high speed saturated switches |
SGS-ATES |
| 467 |
2N2484CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 468 |
2N2487 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 469 |
2N2488 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 470 |
2N2489 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 471 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 472 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 473 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 474 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 475 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 476 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 477 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 478 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
| 479 |
2N2795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 480 |
2N2796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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