| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2SK3289 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 452 |
2SK3290 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 453 |
2SK3348 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 454 |
2SK3349 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 455 |
2SK3378 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 456 |
2SK3380 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 457 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 458 |
2SK680 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 459 |
2SK680A |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 460 |
2SK681 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 461 |
2SK681A |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING |
NEC |
| 462 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 463 |
34P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 464 |
35P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 465 |
36P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 466 |
37P4 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 467 |
AAY30 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 468 |
AAY32 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 469 |
AAY33 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 470 |
AAY48 |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
| 471 |
AAZ13 |
Germanium gold bonded diode, high speed switching |
Mullard |
| 472 |
BAL74 |
SOT23 HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
| 473 |
BAL99 |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
| 474 |
BAL99(Z) |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
Diodes |
| 475 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 476 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 477 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 478 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 479 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 480 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
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