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Datasheets for ICIENCY

Datasheets found :: 7862
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No. Part Name Description Manufacturer
451 AM2520ID08 Subminiature solid state lamp. High efficiency red (peak wavelength 627 nm). Lens type red diffused. Kingbright Electronic
452 AM2520ID09 Subminiature solid state lamp. High efficiency red (peak wavelength 627 nm). Lens type red diffused. Kingbright Electronic
453 AM52-0001 800-960 MHz, 1.2 W high efficiency power amplifier MA-Com
454 AM52-0001 1.2 W High Efficiency Power Amplifier 800 - 960 MHz Tyco Electronics
455 AM52-0001SMB 800-960 MHz, 1.2 W high efficiency power amplifier MA-Com
456 AM52-0001SMB 1.2 W High Efficiency Power Amplifier 800 - 960 MHz Tyco Electronics
457 AM52-0001TR 800-960 MHz, 1.2 W high efficiency power amplifier MA-Com
458 AM52-0001TR 1.2 W High Efficiency Power Amplifier 800 - 960 MHz Tyco Electronics
459 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
460 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
461 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
462 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
463 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
464 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
465 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
466 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
467 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
468 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
469 AN1061 DESIGNING WITH L4978 2A HIGH EFFICIENCY DC-DC CONVERTER SGS Thomson Microelectronics
470 AN1330 DESIGNING WITH L5970D, 1A HIGH EFFICIENCY DC/DC CONVERTER SGS Thomson Microelectronics
471 AN1509 A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR SGS Thomson Microelectronics
472 AN1517 DESIGNING WITH L5972D,UP TO 2A HIGH EFFICIENCY DC/DC CONVERTER SGS Thomson Microelectronics
473 AN1518 DESGNING WITH L5973D, UP TO 2.5A HIGH EFFICIENCY DC/DC CONVERTER SGS Thomson Microelectronics
474 AN1872 Low-Battery Indicator Has Low Cost and High Efficiency MAXIM - Dallas Semiconductor
475 AN234 A HIGH EFFICIENCY,MIXED-TECHNOLOGY MOTOR DRIVER SGS Thomson Microelectronics
476 AN708 Low-Power Universal-Input Power Supply Achieves High Efficiency Vishay
477 AN710 High-Efficiency Buck Converter for Notebook Computers Vishay
478 AN727 High-Frequency, High-Efficiency Buck Converter Design for Multi-Cell Battery Configured Systems Using Si9167 Vishay
479 AND8058 Two New Analog Switches Set Standards for Space Efficiency ON Semiconductor
480 AND8058D Two New Analog Switches Set Standards for Space Efficiency ON Semiconductor


Datasheets found :: 7862
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