| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2N5090 |
Wideband VHF-UHF Class C NPN transistor 1.2W 28V |
SGS Thomson Microelectronics |
| 452 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 453 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 454 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 455 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 456 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 457 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 458 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 459 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 460 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 461 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 462 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 463 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 464 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 465 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 466 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 467 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 468 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 469 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 470 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 471 |
2SA1352 |
Ultrahigh-Definition CRT Display Video Output Applications |
SANYO |
| 472 |
2SA1353 |
Ultrahigh-Definition CRT Display Video Output Applications |
SANYO |
| 473 |
2SA1370 |
High-Definition CRT Display, Video Output Applications |
SANYO |
| 474 |
2SA1371 |
High-Definition CRT Display, Video Output Applications |
SANYO |
| 475 |
2SA1380 |
Ultrahigh-Definition CRT Display, Video Output Applications |
SANYO |
| 476 |
2SA1381 |
PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display, Video Output Applications |
SANYO |
| 477 |
2SA1402 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 478 |
2SA1403 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 479 |
2SA1404 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
| 480 |
2SA1405 |
PNP Epitaxial Planar Silicon Transistors Ultrahigh-Difinition CRT Display Video Output Applications |
SANYO |
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