| No. |
Part Name |
Description |
Manufacturer |
| 451 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 452 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 453 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 454 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 455 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 456 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 457 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 458 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 459 |
3SK0183 |
Gallium Arsenide Devices |
Panasonic |
| 460 |
3SK0184 |
Gallium Arsenide Devices |
Panasonic |
| 461 |
3SK0241 |
Gallium Arsenide Devices |
Panasonic |
| 462 |
3SK0272 |
Gallium Arsenide Devices |
Panasonic |
| 463 |
3SK0273 |
Gallium Arsenide Devices |
Panasonic |
| 464 |
3SK153 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF/ VHF WIDE BAND RF AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 465 |
4244-11UYC |
3.9 3.3mm Eliptical Wide Angle LED Lamps |
Everlight Electronics |
| 466 |
50MT060ULST |
LOW SIDE CHOPPER IGBT MTP |
International Rectifier |
| 467 |
524V13 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 468 |
524V15 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 469 |
524V17 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
| 470 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 471 |
524V27 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 472 |
524V30 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 473 |
524V42 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
| 474 |
524V48 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 475 |
5256VA |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 476 |
5384VA |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 477 |
5450 |
Expandable Dual 2-wide 2-Input AND-OR-INVERT gate |
Fairchild Semiconductor |
| 478 |
5451DMQB |
7 V, dual 2-wide 2-input AOI gate |
National Semiconductor |
| 479 |
5451FMQB |
7 V, dual 2-wide 2-input AOI gate |
National Semiconductor |
| 480 |
54H50 |
Expandable Dual 2-wide 2-Input AND-OR-INVERT gate |
Fairchild Semiconductor |
| | | |
