| No. |
Part Name |
Description |
Manufacturer |
| 451 |
2SD2204 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 452 |
2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive |
TOSHIBA |
| 453 |
2SD2257 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH POWER SWITCHING APPLICATIONS, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 454 |
2SD2481 |
Transistor Silicon NPN Epitaxial Type (PCT process) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 455 |
2SD2526 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications |
TOSHIBA |
| 456 |
2SD2571 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications |
TOSHIBA |
| 457 |
2SD2584 |
Transistor Silicon NPN Triple Diffused Type (darlington) High Power Switching Applications Hammer Drive, Pulse Motor Drive Applications |
TOSHIBA |
| 458 |
2SD2604 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING, HAMMER DRIVE AND PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 459 |
2SD633 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 460 |
2SD635 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS |
TOSHIBA |
| 461 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 462 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 463 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 464 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 465 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 466 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 467 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 468 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 469 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 470 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 471 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 472 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 473 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 474 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 475 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 476 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 477 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 478 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 479 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 480 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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