| No. |
Part Name |
Description |
Manufacturer |
| 451 |
RM600DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 452 |
RM60CZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 453 |
RM60CZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 454 |
RM60CZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 455 |
RM60CZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 456 |
RM60CZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 457 |
RM60CZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 458 |
RM60DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 459 |
RM60DZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 460 |
RM60DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 461 |
RM60DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 462 |
RM60DZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 463 |
RM60DZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 464 |
RM60SZ-6R |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 465 |
RM60SZ-6S |
DIODE MODULES MEDIUM POWER GENERAL USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 466 |
RM60SZ-6S/-6R |
Fast Recovery Diode Modules, F Series (for welding) |
Mitsubishi Electric Corporation |
| 467 |
RVM60A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 468 |
RVM60A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 469 |
RVM60B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 470 |
RVM60B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 471 |
SBR05M60BLP |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 472 |
SBR05M60BLP-7 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 473 |
SBRT20M60SP5 |
20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI�5 |
Diodes |
| 474 |
SBRT20M60SP5-13 |
20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI�5 |
Diodes |
| 475 |
SBRT20M60SP5-13D |
20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI�5 |
Diodes |
| 476 |
SBRT20M60SP5-7 |
20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI�5 |
Diodes |
| 477 |
SBRT20M60SP5-7D |
20A TrenchSBR TRENCH SUPER BARRIER RECTIFIER POWERDI�5 |
Diodes |
| 478 |
SBRT25M60SLP |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 479 |
SBRT25M60SLP-13 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
| 480 |
SHM60 |
High Speed SAMPLE/HOLD |
Burr Brown |
| | | |
