| No. |
Part Name |
Description |
Manufacturer |
| 451 |
BDX53TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 452 |
BDX54ATU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 453 |
BDX54BTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 454 |
BDX54CTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 455 |
BF177 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
| 456 |
BF178 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
| 457 |
BF179 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
| 458 |
BF224 |
NPN Epitaxial Silicon Planar Transistor |
Texas Instruments |
| 459 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 460 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 461 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 462 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 463 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 464 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 465 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 466 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 467 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 468 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 469 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 470 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 471 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 472 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 473 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 474 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 475 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 476 |
BU806 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 477 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 478 |
BU807 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 479 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 480 |
BU807TU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
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